Microsemi’s latest silicon carbide (SiC) mosfets are on show at PCIM in Nuremberg, Germany this week.

These are 1200V mosfets intended to be offer improved energy efficiency in high power applications include solutions for solar inverters, electric vehicles, welding and medical devices.

The devices’ low gate resistance will minimise switching energy loss, even at high frequencies.

According to Marc Vandenberg, general manager for Microsemi’s power products, the supplier is expanding its SiC product portfolio supported by in-house fabrication capabilities.

The 1200V SiC mosfets are rated at 80 milliohms and 50 milliohms and are available in industry standard TO-247 and SOT-227 packages.