Semiconductor devices based on silicon carbide such as high power semiconductor devices and high temperature semiconductor devices are very useful when it comes to the devices being used in harsh conditions. The silicon based semiconductor device is slowly exiting the semiconductor market and is aggressively being replaced with more a powerful material called Silicon Carbide. Growth of Silicon Carbide based semiconductor device is mainly due to the fact that it has found its application in high voltage power electronics market generally high voltage is above one kilo volt (> 1 KV). Thus, sectors such as industrial and power account a major share of revenue from silicon carbide based semiconductor devices. Automotive and transportation sectors are also expected to have huge potential application for the silicon carbide market. These sectors include electric vehicle, railways, and airways.

Silicon Carbide (SiC) material has distinctive properties because of which it can withstand high temperature, high voltage, and high frequency. The electronics business is experiencing continuous technological changes and thus, it is demanding more advanced semiconductor materials. The SiC material is not only used in electronics applications but also used in other commercial applications such as abrasive materials, cutting tools, body armors, automobile brakes and lighting applications.

The semiconductors and electronics market is growing at a fast pace;due to the technological advancements in the SiC devices, the size and cost of SiC semiconductor devices has decreased and their energy and operating efficiency has increased. The silicon carbide semiconductor device manufacturers are involved in strong R&D and support continuous development in their product offerings.

The overall Silicon Carbide Semiconductor Market is segmented into four major segments- technology, products, applications, and geography. All the segments are separately classified in the report. The silicon carbide based semiconductor market is expected to grow by 2020, at an estimated CAGR of 42.03% from 2014 to 2020.

Geographically, the silicon carbide based semiconductor market is segmented into North America (the U.S. and others), Europe, APAC (China, India, and others) and Rest of the World (Latin America, Middle East and others); geographic segment accounts Japan separately. The APAC market accounts for the highest market size and is followed by North America and Europe respectively. Japan, which is considered to the birth place of silicon carbide, accounted for approximately 13.83% of the total silicon carbide based semiconductor market in terms of value in 2013.

The players involved in the development of silicon carbide based semiconductor market includes CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.), Norstel AB (Sweden), Renesas Electronics Corporation (Japan), ROHM Co. Ltd. (Japan), STMicroelectronics N.V (Switzerland), and Toshiba Corporation (Japan).