Diamond-like carbon (DLC) films were prepared from methane by plasma source ion implantation (PSII) and plasma enhanced chemical vapor deposition (PECVD). It was found that DLC films were prepared by combining PSII with PECVD, which had very good properties (such as smooth surface morphology and strong adhesion). It was a novel method in international field. The paper described the controlling measures of the equipment and discussed the mechanisms of growing DLCs. Meanwhile, the properties and characters of DLC films were observed by Raman spectroscopy, FT-IR spectroscopy, AFM and otherwise methods.The results were summarized as follows:(1)Diamond-like carbon films could be fabricated by plasma source ion implantation; It was found that different parameters such as the negative voltage, frequency, gas flux influenced sp3 bond ratio of DLCs, the paper described the effect in details and showed that Diamond-like carbon films with increasing negative voltage, reducing frequency, appropriate gas flux got high proportion of sp3 bond; DLCs prepared by PSII contained a good deal of SiC, the composition affected its properties (such as the films hardness); PSII method could offer good adhesion to DLCs, but it caused the surface morphology to become asperity.(2)Diamond-like carbon films could be fabricated by plasma enhanced chemical vapor deposition method too, the surface morphology of the films was good, but the films had very big internal stress, which could be decreased by adding proper nitrogen gas in work chamber.(3) DLC films were prepared by combining PSII method with PECVD method, the films got not only smooth surface morphology but also strong adhesion, in such a fashion that it was the best method.