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Study on doping effect of interface binding state in the system of PCD and PDC at superhigh pressure
Post Date: 06 Oct 2008 Viewed: 956
(China Science & Technology Group Company for Iron & Steel Research, Beijing 10081, China)
Abstract Experimental and theoretical researches on the doping effect of interface binding state with homologous and heterogeneous dopants (d) in the system of PCD etc, as well as the action of intermediate layers between D/d at superhigh pressure and high temperature(HP-HT) are reported in this paper.
